A space qualified power GaN amplifier that can operate from 27 to 31 GHz, achieves 36.5 dBm saturated output power, with a power added efficiency of 25% and 25dB of small signal gain. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms. Offered in a hermetically sealed 22-lead 7x7 mm ceramic QFN designed for surface mount to a printed circuit board. The package has a Cu base, offering superior thermal management. The amplifier is suited to support military and space applications. Features- • Frequency Range: 27-31 GHz • Pout: 36.5 dBm at Pin = 14 dBm • PAE: 25% CW • Small Signal Gain: 25 dB • IM3: -35 dBc @ 25 dBm pout / Tone • Bias: Vd=+20V, Idq=140ma, Vg=-3.0V Typical Technical Specifications- (Kindly refer to the images)* Applications- • Military SATCOM Terminals • Space Satellite Communications • Ka Band High Power Amplifiers • Military and Space applications